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Effect of Growth Interruption on Surface Recombination Velocity in GaInAsSb/AlGaAsSb Heterostructures Grown by Organometallic Vapor Phase Epitaxy

机译：生长中断对有机金属气相外延生长GaInassb / alGaassb异质结构表面复合速度的影响

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Wang, CA; Shiau, DA; Donetsky, D; Anikeev, S; Belenky, G; Luryi, S;
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1. Effect of growth interruption on surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor-phase epitaxy [J] . C.A. Wang, D.A. Shiau, D. Donetsky, Journal of Crystal Growth . 2004,第1a4期

机译：生长中断对有机金属气相外延生长的GaInAsSb / AlGaAsSb异质结构中表面复合速度的影响
2. Extremely low surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures [J] . C. A. Wang, D. A. Shiau, D. Donetsky, Applied Physics Letters . 2005,第10期

机译：GaInAsSb / AlGaAsSb异质结构中的表面复合速度极低
3. Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy [J] . Yoshikane T, Urakami A, Koizumi A, Applied Surface Science . 2004,第1a4期

机译：生长顺序对低压有机金属气相外延生长原子序界面结构和GaInP / GaAs / GaInP双异质结构特性的影响
4. GaInAsSb/AlGaAsSb diode lasers grown by organometallic vapor phase epitaxy [C] . Christine A. Wang, MIT Lincoln Lab., Bedford, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared . 1997

机译：通过有机金属气相外延生长的GaInAsSb / AlGaAsSb二极管激光器
5. Surfactants control of surface process in gallium indium phosphide and gallium arsenide epitaxial layers grown by organometallic vapor phase epitaxy. [D] . Jun, Sung Won. 2001

机译：表面活性剂控制通过有机金属气相外延生长的磷化铟镓和砷化镓外延层的表面过程。
6. Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate [O] . Hoki Son, Ye-ji Choi, Soon-Ku Hong, 2021

机译：卤化物气相外延在锥形截肢型蓝宝石衬底上生长的α-GA2O3癫痫脱位的减少
7. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy [O] . Wang, C.A., Vineis, C.J., Calawa, D.R. 2002

机译：有机金属气相外延生长alGaassb / Gasb分布布拉格反射镜
8. Effect of Growth Interruption on Surface Recombination Velocity in GaInAsSb/AlGaAsSb Heterostructures Grown by Organometallic Vapor Phase Epitaxy [R] . 2004

机译：生长中断对有机金属气相外延生长GaInassb / alGaassb异质结构表面复合速度的影响

Effect of Growth Interruption on Surface Recombination Velocity in GaInAsSb/AlGaAsSb Heterostructures Grown by Organometallic Vapor Phase Epitaxy

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